AO4433

Series: -
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
FET Type: MOSFET P-Channel, Metal Oxide
Power - Max: 3W
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Gate Charge (Qg) @ Vgs: 38nC @ 10V
Current - Continuous Drain (Id) @ 25° C: 11A
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Packaging: Cut Tape (CT)
Supplier Device Package: 8-SOIC
Manufacturer: Alpha & Omega Semiconductor Inc
Input Capacitance (Ciss) @ Vds: 2200pF @ 15V
Rds On (Max) @ Id, Vgs: 14 mOhm @ 11A, 20V


Features:

` V<sub>DS</sub> (V) = -30V
` I_D = -11 A (V_GS = -20V)
` R<sub>DS(ON)</sub> < 14m (V<sub>GS</sub> = -20V)
` R_DS(ON) < 18m (V_GS = -10V)
` ESD Rating: 1.5KV HBM




Pinout






Specifications

Parameter		Symbol	Maximum	Units
Drain-Source Voltage		VDS	-30	V
Gate-Source Voltage		VGS	±25	V
Continuous Drain Current A	TA=25	ID	-11	V
	TA=70		-9.7
Pulsed Drain Current B		IDM	-50
Power Dissipation A	TA=25	PD	3	W
	TA=70		2.1
Junction and Storage Temperature Range		TJ, TSTG	-55 to 150

Description

The AO4433 uses advanced trench technology to provide excellent R_DS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. The device is ESD protected. Standard product AO4433 is Pb-free (meets ROHS & Sony 259 specifications). AO4433L is a Green Product ordering option. AO4433 and AO4433L are electrically identical

The AO4433 is designed as one kind of N-channel enhancement mode field effect transistor that can be used in as a load switch or in PWM applications. Also this device is a green product ordering option and electrically identical. Features of the AO4433 are:(1)RDS(ON) < 14 m (VGS = -20 V);(2)RDS(ON) < 18 m (VGS = -10 V);(3)ID = -11 A (VGS = 10V);(4)VDS (V) = -30 V.

The absolute maximum ratings of the AO4433 can be summarized as:(1)Drain-Source Voltage: -30 V;(2)Gate-Source Voltage: +/- 25 V;(3)Continuous Drain Current TA=25°C: -11 A;(4)Continuous Drain Current TA=70°C: -9.7 A;(5)Pulsed Drain Current: -50 A;(6)Power Dissipation TA=25°C: 3 W;(7)Power Dissipation TA=70°C: 2.1 W;(8)Junction and Storage Temperature Range: -55 to 150 .

The electrical characteristics of this device can be summarized as:(1)Drain-Source Breakdown Voltage: -30 V;(2)Zero Gate Voltage Drain Current: -1 uA;(3)Gate-Body leakage current: +/- 1 uA;(4)Gate Threshold Voltage: -2 to -4 V;(5)On state drain current: -50 A;(6)Forward Transconductance: 20 S;(7)Diode Forward Voltage: -0.72 to -1 V;(8)Maximum Body-Diode Continuous Current: -4.2 A. If you want to know more information such as the electrical characteristics about the AO4433, please download the datasheet in www.seekic.com or www.chinaicmart.com.

Parameters:

Technical/Catalog Information	AO4433
Vendor	Alpha & Omega Semiconductor Inc
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	11A
Rds On (Max) @ Id, Vgs	14 mOhm @ 11A, 20V
Input Capacitance (Ciss) @ Vds	2200pF @ 15V
Power - Max	3W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	38nC @ 10V
Package / Case	8-SOIC
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	AO4433 AO4433 785 1029 2 ND 78510292ND 785-1029-2