AO4430

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Packaging: Cut Tape (CT)Alternate Packaging
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power - Max: 3W
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Current - Continuous Drain (Id) @ 25° C: 18A
Supplier Device Package: 8-SOIC
Gate Charge (Qg) @ Vgs: 124nC @ 10V
Manufacturer: Alpha & Omega Semiconductor Inc
Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 18A, 10V
Input Capacitance (Ciss) @ Vds: 7270pF @ 15V


Features:

V_DS (V) = 30V
I_D = 18A
R_DS(ON) < 5.5m (V_GS = 10V)
R_DS(ON) < 7.5m (V_GS = 4.5V)




Pinout






Specifications

Paramete		Symbol	Maximum	Units
Drain-Source Voltage		VDS	30	V
Gate-Source Voltage		VGS	±20	V
Continuous Drain Current A	TA=25°C	ID	18	A
	TA=70°C		15
Pulsed Drain Current B		IDM	80
Power Dissipation	TA=25°C	PD	3	W
	TA=70°C		2.1
Junction and Storage Temperature Range		TJ, TSTG	-55 to 150	°C

Description

The AO4430 is designed as one kind of N-channel enhancement mode field effect transistor that can be used in as a load switch or in PWM applications. Also this device is a green product ordering option and electrically identical. Features of the AO4433 are:(1)RDS(ON) < 5.5 m (VGS = 10 V);(2)RDS(ON) < 7.5 m (VGS = 4.5 V);(3)ID = 18 A (VGS = 10V);(4)VDS (V) = 30 V.

The absolute maximum ratings of the AO4430 can be summarized as:(1)Drain-Source Voltage: 30 V;(2)Gate-Source Voltage: +/- 20 V;(3)Continuous Drain Current TA=25°C: 18 A;(4)Continuous Drain Current TA=70°C: 15 A;(5)Pulsed Drain Current: 80 A;(6)Power Dissipation TA=25°C: 3 W;(7)Power Dissipation TA=70°C: 2.1 W;(8)Junction and Storage Temperature Range: -55 to 150 .

The electrical characteristics of this device can be summarized as:(1)Drain-Source Breakdown Voltage: 30 V;(2)Zero Gate Voltage Drain Current: 1 uA;(3)Gate-Body leakage current: 100 nA;(4)Gate Threshold Voltage: 1 to 2.5 V;(5)On state drain current: 80 A;(6)Forward Transconductance: 82 S;(7)Diode Forward Voltage: 0.7 to 1 V;(8)Maximum Body-Diode Continuous Current: 4.5 A. If you want to know more information such as the electrical characteristics about the AO4430, please download the datasheet in www.seekic.com or www.chinaicmart.com.

The AO4430 uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity, body diode characteristics and ultra-low gate resistance. This device is ideally suited for use as a low side switch in Notebook CPU core power conversion. AO4430L (Green Product) is offered in a lead free package.




Parameters:

Technical/Catalog Information	AO4430
Vendor	Alpha & Omega Semiconductor Inc
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	18A
Rds On (Max) @ Id, Vgs	5.5 mOhm @ 18A, 10V
Input Capacitance (Ciss) @ Vds	7270pF @ 15V
Power - Max	3W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	124nC @ 10V
Package / Case	8-SOIC
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	AO4430 AO4430 785 1028 2 ND 78510282ND 785-1028-2