MOSFET P CH 30V 17A SOIC 8
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Series: | - | Manufacturer: | Alpha & Omega Semiconductor Inc | ||
FET Type: | MOSFET P-Channel, Metal Oxide | Gain : | 15.5 dB | ||
Transistor Type: | - | Current - Collector (Ic) (Max): | - | ||
FET Feature: | Logic Level Gate | Drain to Source Voltage (Vdss): | 30V | ||
Voltage - Collector Emitter Breakdown (Max): | - | Current - Continuous Drain (Id) @ 25° C: | 17A | ||
Vce Saturation (Max) @ Ib, Ic: | - | Current - Collector Cutoff (Max): | - | ||
Rds On (Max) @ Id, Vgs: | 6.2 mOhm @ 15A, 20V | DC Current Gain (hFE) (Min) @ Ic, Vce: | - | ||
Vgs(th) (Max) @ Id: | 2.6V @ 250µA | Gate Charge (Qg) @ Vgs: | 57nC @ 10V | ||
Frequency - Transition: | - | Input Capacitance (Ciss) @ Vds: | 3033pF @ 15V | ||
Power - Max: | 3.1W | Mounting Type: | Surface Mount | ||
Package / Case: | 8-SOIC (0.154", 3.90mm Width) | Supplier Device Package: | 8-SO |
Parameter |
Symbol |
Maximum |
Units | |
Drain-Source Voltage |
VDS |
-30 |
V | |
Gate-Source Voltage |
VGS |
±25 |
V | |
Continuous Drain Current A |
TA=25 |
ID |
-15 |
V |
TA=70 |
-12.1 | |||
Pulsed Drain Current B |
IDM |
-80 | ||
Power Dissipation A |
TA=25 |
PD |
3.1 |
W |
TA=70 |
2 | |||
Junction and Storage Temperature Range |
TJ, TSTG |
-55 to 150 |
The AO4423 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. It is ESD protected. AO4423L (Green Product) is offered in a lead-free package. AO4423 is Pb-free (meets ROHS & Sony 259 specifications). AO4423L is a Green Product ordering option. AO4423 and AO4423L are electrically identical.