MOSFET P-CH -30V -9.7A 8-SOIC
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Series: | - | Manufacturer: | Alpha & Omega Semiconductor Inc | ||
FET Type: | MOSFET P-Channel, Metal Oxide | Gain : | 15.5 dB | ||
Transistor Type: | - | Current - Collector (Ic) (Max): | - | ||
FET Feature: | Logic Level Gate | Drain to Source Voltage (Vdss): | 30V | ||
Voltage - Collector Emitter Breakdown (Max): | - | Current - Continuous Drain (Id) @ 25° C: | 9.7A | ||
Vce Saturation (Max) @ Ib, Ic: | - | Current - Collector Cutoff (Max): | - | ||
Rds On (Max) @ Id, Vgs: | 20 mOhm @ 9.7A, 10V | DC Current Gain (hFE) (Min) @ Ic, Vce: | - | ||
Vgs(th) (Max) @ Id: | 2.7V @ 250µA | Gate Charge (Qg) @ Vgs: | 32nC @ 10V | ||
Frequency - Transition: | - | Input Capacitance (Ciss) @ Vds: | 1900pF @ 15V | ||
Power - Max: | 3W | Mounting Type: | Surface Mount | ||
Package / Case: | 8-SOIC (0.154", 3.90mm Width) | Supplier Device Package: | 8-SOIC |
Paramete | Symbol | Maximum | Units | |
Drain-Source Voltage | VDS | -30 | V | |
Gate-Source Voltage | VGS | ±20 | V | |
Continuous Drain Current A | TA=25°C | ID | -9.7 | A |
TA=70°C | -8.1 | |||
Pulsed Drain Current B | IDM | -40 | ||
Power Dissipation A | TA=25°C | PD | 3 | W |
TA=70°C | 2.1 | |||
Junction and Storage Temperature Range | TJ, TSTG | -55 to 150 | °C |
Technical/Catalog Information | AO4419 |
Vendor | Alpha & Omega Semiconductor Inc |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | P-Channel |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25° C | 9.7A |
Rds On (Max) @ Id, Vgs | 20 mOhm @ 9.7A, 10V |
Input Capacitance (Ciss) @ Vds | 1900pF @ 15V |
Power - Max | 3W |
Packaging | Tape & Reel (TR) |
Gate Charge (Qg) @ Vgs | 32nC @ 10V |
Package / Case | 8-SOIC |
FET Feature | Logic Level Gate |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | AO4419 AO4419 785 1024 2 ND 78510242ND 785-1024-2 |