AO4419

MOSFET P-CH -30V -9.7A 8-SOIC

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SeekIC No. : 003431031 Detail

AO4419: MOSFET P-CH -30V -9.7A 8-SOIC

floor Price/Ceiling Price

US $ .17~.49 / Piece | Get Latest Price
Part Number:
AO4419
Mfg:
Supply Ability:
5000

Price Break

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  • 25~100
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  • 500~1000
  • Unit Price
  • $.49
  • $.34
  • $.3
  • $.25
  • $.22
  • $.17
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
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  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/12/22

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Product Details

Quick Details

Series: - Manufacturer: Alpha & Omega Semiconductor Inc
FET Type: MOSFET P-Channel, Metal Oxide Gain : 15.5 dB
Transistor Type: - Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 9.7A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 20 mOhm @ 9.7A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 2.7V @ 250µA Gate Charge (Qg) @ Vgs: 32nC @ 10V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 1900pF @ 15V
Power - Max: 3W Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC    

Description

Series: -
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Packaging: Cut Tape (CT)Alternate Packaging
FET Type: MOSFET P-Channel, Metal Oxide
Power - Max: 3W
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Gate Charge (Qg) @ Vgs: 32nC @ 10V
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Current - Continuous Drain (Id) @ 25° C: 9.7A
Supplier Device Package: 8-SOIC
Manufacturer: Alpha & Omega Semiconductor Inc
Rds On (Max) @ Id, Vgs: 20 mOhm @ 9.7A, 10V
Input Capacitance (Ciss) @ Vds: 1900pF @ 15V


Features:

VDS (V) = -30V
ID = -9.7 A (VGS = -10V)
RDS(ON) < 20m (VGS = -10V)
RDS(ON) < 35m (VGS = -4.5V)





Specifications

Paramete Symbol Maximum Units
Drain-Source Voltage VDS -30 V
Gate-Source Voltage VGS ±20 V
Continuous Drain Current A TA=25°C ID -9.7 A
TA=70°C -8.1
Pulsed Drain Current B IDM -40
Power Dissipation A TA=25°C PD 3 W
TA=70°C 2.1
Junction and Storage Temperature Range TJ, TSTG -55 to 150 °C






Description

The AO4419 uses advanced trench technology to provide excellent RDS(ON), and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AO4419 is Pb-free (meets ROHS & Sony 259 specifications). AO4419L is a Green Product ordering option. AO4419 and AO4419L are electrically identical.




Parameters:

Technical/Catalog InformationAO4419
VendorAlpha & Omega Semiconductor Inc
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityP-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C9.7A
Rds On (Max) @ Id, Vgs20 mOhm @ 9.7A, 10V
Input Capacitance (Ciss) @ Vds 1900pF @ 15V
Power - Max3W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs32nC @ 10V
Package / Case8-SOIC
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names AO4419
AO4419
785 1024 2 ND
78510242ND
785-1024-2



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