AO4415

Series: -
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
FET Type: MOSFET P-Channel, Metal Oxide
Gate Charge (Qg) @ Vgs: 21nC @ 10V
Packaging: Tape & Reel (TR)
Power - Max: 3W
Current - Continuous Drain (Id) @ 25° C: 8A
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Input Capacitance (Ciss) @ Vds: 1100pF @ 15V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: 8-SOIC
Manufacturer: Alpha & Omega Semiconductor Inc
Rds On (Max) @ Id, Vgs: 26 mOhm @ 8A, 20V


Features:

V_DS (V) = -30V
I_D = -8 A
R_DS(ON) < 26m (V_GS = -20V)
R_DS(ON) < 35m (V_GS = -10V)




Specifications

Paramete		Symbol	Maximum	Units
Drain-Source Voltage		VDS	-30	V
Gate-Source Voltage		VGS	±25	V
Continuous Drain Current A	TA=25°C	ID	-8	A
	TA=70°C		-6.6
Pulsed Drain Current B		IDM	-40
Power Dissipation A	TA=25°C	PD	3	W
	TA=70°C		2.1
Junction and Storage Temperature Range		TJ, TSTG	-55 to 150	°C

Description

The AO4415 uses advanced trench technology to rovide excellent RDS(ON), and ultra-low low gate harge. This device is suitable for use as a load witch or in PWM applications.