AO4407

The AO4407 is designed as one kind of P-channel enhancement mode field effect transistor that can be used in as a load switch or in PWM applications. Also this device is a green product ordering option and electrically identical. Features of the AO4433 are:(1)RDS(ON) < 11 m (VGS = -10 V);(2)RDS(ON) < 13 m (VGS = -10.0 V);(3)ID = -12.0 A (VGS = -10 V);(4)VDS (V) = -30 V.

The absolute maximum ratings of the AO4407 can be summarized as:(1)Drain-Source Voltage: -30 V;(2)Gate-Source Voltage: +/- 25 V;(3)Continuous Drain Current TA=25°C: -12.0 to -9.2 A;(4)Continuous Drain Current TA=70°C: -10.0 to -7.4 A;(5)Pulsed Drain Current: -60 A;(6)Power Dissipation TA=25°C: 3.1 to 1.7 W;(7)Power Dissipation TA=70°C: 2.0 to 1.1 W;(8)Junction and Storage Temperature Range: -55 to 150 .

The electrical characteristics of AO4407 can be summarized as:(1)Drain-Source Breakdown Voltage: -30 V;(2)Zero Gate Voltage Drain Current: -10 uA;(3)Gate-Body leakage current: +/- 100 nA;(4)Gate Threshold Voltage: -1.7 to -3 V;(5)On state drain current: -60 A;(6)Forward Transconductance: 21 S;(7)Diode Forward Voltage: -0.70 to -1.0 V;(8)Maximum Body-Diode Continuous Current: -3.0 A. If you want to know more information such as the electrical characteristics about the AO4407, please download the datasheet in www.seekic.com or www.chinaicmart.com.