MOSFET N-CH 30V 11.5A 8-SOIC
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Series: | - | Manufacturer: | Alpha & Omega Semiconductor Inc | ||
FET Type: | MOSFET N-Channel, Metal Oxide | Transistor Type: | - | ||
Gain : | 11.5 dB at 500 MHz | Current - Collector (Ic) (Max): | - | ||
FET Feature: | Logic Level Gate | Drain to Source Voltage (Vdss): | 30V | ||
Voltage - Collector Emitter Breakdown (Max): | - | Current - Continuous Drain (Id) @ 25° C: | 11.5A | ||
Vce Saturation (Max) @ Ib, Ic: | - | Current - Collector Cutoff (Max): | - | ||
Rds On (Max) @ Id, Vgs: | 14 mOhm @ 12A, 10V | DC Current Gain (hFE) (Min) @ Ic, Vce: | - | ||
Vgs(th) (Max) @ Id: | 1.5V @ 250µA | Gate Charge (Qg) @ Vgs: | 24nC @ 4.5V | ||
Frequency - Transition: | - | Input Capacitance (Ciss) @ Vds: | 2300pF @ 15V | ||
Power - Max: | 3W | Mounting Type: | Surface Mount | ||
Package / Case: | 8-SOIC (0.154", 3.90mm Width) | Supplier Device Package: | 8-SOIC |
Paramete | Symbol | Maximum | Units | |
Drain-Source Voltage | VDS | 30 | V | |
Gate-Source Voltage | VGS | ±12 | V | |
Continuous Drain Current A | TA=25°C | ID | 11.5 | A |
TA=70°C | 9.6 | |||
Pulsed Drain Current B | IDM | 80 | ||
Avalanche Current B,E | IAV | 25 | A | |
Repetitive Avalanche Energy B,E L=0.1mH | EAV | 78 | mJ | |
Power Dissipation | TA=25°C | PD | 3 | W |
TA=70°C | 2.1 | |||
Junction and Storage Temperature Range | TJ, TSTG | -55 to 150 | °C |
Technical/Catalog Information | AO4406 |
Vendor | Alpha & Omega Semiconductor Inc (VA) |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25° C | 11.5A |
Rds On (Max) @ Id, Vgs | 14 mOhm @ 12A, 10V |
Input Capacitance (Ciss) @ Vds | 2300pF @ 15V |
Power - Max | 3W |
Packaging | Digi-Reel? |
Gate Charge (Qg) @ Vgs | 24nC @ 4.5V |
Package / Case | 8-SOIC |
FET Feature | Logic Level Gate |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | AO4406 AO4406 785 1021 6 ND 78510216ND 785-1021-6 |