Features: High design flexibility • Easy circuit constant design because of setting resistance or capacitance to an arbitrary value. • Free setting of contacts between a substrate and GND wiring prevents from operation error to be caused by floating of substrate potential. • Us...
AN9D: Features: High design flexibility • Easy circuit constant design because of setting resistance or capacitance to an arbitrary value. • Free setting of contacts between a substrate and G...
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High design flexibility
• Easy circuit constant design because of setting resistance or capacitance to an arbitrary value.
• Free setting of contacts between a substrate and GND wiring prevents from operation error to be caused by
floating of substrate potential.
• Usable for multi power source because a resistor island potential can be set for each unit.
• Builds in a lateral type PNP transistor of high reverse breakdown voltage between base and emitter, or a
collector wall type NPN transistor of excellent saturation characteristics(AN9DA00, AN9DB00, AN9DF00)
Short development period
• Due to a full automatic layout design, a sample is available in one month from a completion of a circuit
diagram.
Applicable to a small quantity production item
• Possible to develop a custom IC for small quantity production due to a low development cost.
Parameter | Symbol | Max n-channel | Max p-channel | Units | |
Drain-Source Voltage | VDS | 30 | -30 | V | |
Gate-Source Voltage | VGS | ±20 | ±20 | V | |
Continuous Drain Current A | TA=25°C | ID | 7.5 | -6.6 | A |
TA=70°C | 6 | -5.3 | |||
Pulsed Drain Current B | IDM | 30 | -30 | ||
Power Dissipation | TA=25°C | PD | 2.5 | 2.5 | W |
TA=70°C | 1.6 | 1.6 | |||
Junction and Storage Temperature Range | TJ, TSTG | -55 to 150 | -55 to 150 | °C |