Features: SpecificationsDescriptionThe AN1084 is a kind of quadruple operational amplifier with input stages consisting of P-ch J-FET adopting the ion implantation process.They can be applied widely to general control equipments and medical equipments such as intergrators,sample and hold circuits ...
AN1084: Features: SpecificationsDescriptionThe AN1084 is a kind of quadruple operational amplifier with input stages consisting of P-ch J-FET adopting the ion implantation process.They can be applied widely...
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The AN1084 is a kind of quadruple operational amplifier with input stages consisting of P-ch J-FET adopting the ion implantation process.They can be applied widely to general control equipments and medical equipments such as intergrators,sample and hold circuits and high input impedance buffers.There are some features as follows.First is high slew rate: SR=11 V/S typ.The second is low input bias current: Ibias=30 pA typ.Then is low offset current: IIO=50 pA typ.Next is high impedance: 1012.The fifth is high voltage gain: GV=106 dB typ.The sixth is wide range of supply voltage:±5 V to ±18 V.The seventh is built-in phase compensation circuit.
What comes next is about the AN1084 absolute maximum ratings.The VCC (supply voltage) is ±18 V.The VID (differential input voltage) is ±30 V.The VICM (common code voltage) is ±15 V.The PD (power dissipation) is 570 mW.The Topr (operating ambient temperature) is from -20 to +75.The Tstg (storage temperature) is from -55 to +150.
The following is about the electrical characteristics of AN1084(VCC=15 V,VEE=-15 V,Ta=15).The typical VI(offset) (input offset voltage) is 2 mV and the maximum is 10 mV at RS50.The typical IIO (input offset current) is 5 pA and the maximum is 200 pA.The typical Ibias (input bias current) is 30 pA and the maximum is 400 pA.The minimum GV (voltage gain) is 88 dB and the typical is 106 dB at RL=2 k,VO=±10 V.The minimum VO(max) (maximum output voltage) is ±12 V and the typical is ±14 V at RL10 k.The minimum VO(max) (maximum output voltage) is ±10 V and the typical is ±12.5 V at RL2 k.