AN0420

Features: SpecificationsDescriptionAN0420 is a kind of monolithic P-channel enhancement mode.The typical applications include high impendance/low leakage measurements for bared board testers,high voltage electoluminescent panel drivers,high voltage eletrostatic array drivers and general multi-chan...

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SeekIC No. : 004285137 Detail

AN0420: Features: SpecificationsDescriptionAN0420 is a kind of monolithic P-channel enhancement mode.The typical applications include high impendance/low leakage measurements for bared board testers,high vo...

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Part Number:
AN0420
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Features:






Specifications






Description

AN0420 is a kind of monolithic P-channel enhancement mode.The typical applications include high impendance/low leakage measurements for bared board testers,high voltage electoluminescent panel drivers,high voltage eletrostatic array drivers and general multi-channel driver array.There are some features as follows.First is ESD gate protection.The second is 160 V and 400 V capability.Then is interfaces directly to CMOS logic.Next is 8 independent channels.The fifth is low crosstalk between channels.The sixth is low power dissipation.The seventh is pin compatible with industry standard driver array.The eighth is low drain to source leakage.The last one is free from secondary breakdown.

What comes next is about the AN0420 absolute maximum ratings.The gate-to-source voltage is ±20 V.The operating and storage temperature is from -55 to +150.The soldering temperature is 300.The channel-to-channel crosstalk is 10 mV/V.

The following is about the electrical characteristics of AN0420 (@ 25).The minimum BVDSS (drain-to-source breakdown voltage) is 200 V at ID=100A,VGS=0 V.The minimum VGS(th) (gate threshold voltage) is 2 V and the maximum is 5 V at VGS=VDS,ID=1 mA.The typical VGS(th) (change in VGS(th) with temperature) is -3.5 mV/ at VGS=VDS,ID=1 mA.The maximum IGSS (gate body leakage) is 10 nA at VGS=±20 V,VDS=0 V.The maximum IDSS (zero gate voltage drain current) is 1A at VGS=0 V,VDS=Max Rating.The minimum ID(ON) (on-state drain current) is 25 mA at VGS=10 V,VDS=25 V.






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