Features: SpecificationsDescriptionThe AN002R2-29 is a kind of SP2T reflective FET MMIC switch.It consists of a GaAs SP2T chip with intergral driver.It is ideal for cellular base stations when channel switching is required.This unit is used in military switched filter banks,instruments and telecom...
AN002R2-29: Features: SpecificationsDescriptionThe AN002R2-29 is a kind of SP2T reflective FET MMIC switch.It consists of a GaAs SP2T chip with intergral driver.It is ideal for cellular base stations when chann...
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Features: SpecificationsDescriptionThe AN002M4-05 is a kind of SP4T non reflective FET MMIC switch...
The AN002R2-29 is a kind of SP2T reflective FET MMIC switch.It consists of a GaAs SP2T chip with intergral driver.It is ideal for cellular base stations when channel switching is required.This unit is used in military switched filter banks,instruments and telecommunication applications.It requires two lines of logic control.The AN002R2-53 is the gullwing version for surface mount applications.
There are some features of AN002R2-29 as follows.First is intergral driver ±5 V supply voltages.The second is non-reflective all ports.Then is two line control.The last one is capable of meeting MIL-STD requirements.
What comes next is about the AN002R2-29 absolute maximum ratings.The RF In (RF input power) is 0.8 W when > 500 MHz and 0.2 W @ 50 MHz.The VB (bias voltage) is ±7.0 V.The VC (control voltage) is 7.0 V.The TOP (operating temperature) is from -55 to +125.The TST (storage temperature) is from -65 to +150.The JC (thermal resistance) is 30/W.Then is about the operating characteristics at 25.The typical intermodulation intercept point (IP3) is 40 dBm at 0.5 to 2 GHz and 29 dBm at 0.001 GHz for two-tone input power 13 dBm.The minimum VLOW (control voltage) is 0 V and the maximum is 0.8 V.The minimum VHIGH (control voltage) is 2.0 V and the maximum is 5.5 V.The minimum supply voltage is +4.50 V and the maximum is +5.50 V at +5 V @ 3 mA typ.The minimum supply voltage is -4.75 V and the maximum is -5.25 V at -5 V @ 3 mA typ.