Features: SpecificationsDescriptionThe ANADIGICS AMT8504 is a 3.3 V monolithically integrated metal-semiconductor-metal(MSM) photodetector and transimpedance amplifier(TIA) used to convert an 850 nm input optical signal into a differential input voltage, and is manufactured in ANADIGICS 6 GaAs wa...
AMT8504: Features: SpecificationsDescriptionThe ANADIGICS AMT8504 is a 3.3 V monolithically integrated metal-semiconductor-metal(MSM) photodetector and transimpedance amplifier(TIA) used to convert an 850 nm...
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Features: · 2.5 Gb/s Differential Output TIA· 3.3V Operation· Automatic Gain Control· 850 nm Photo...
Features: · 2.5 Gb/s Differential Output TIA· 3.3V Operation· Automatic Gain Control· 850 nm Photo...
The ANADIGICS AMT8504 is a 3.3 V monolithically integrated metal-semiconductor-metal(MSM) photodetector and transimpedance amplifier(TIA) used to convert an 850 nm input optical signal into a differential input voltage, and is manufactured in ANADIGICS 6" GaAs wafer fabrication facility. The integrated MSM and TIA receiver maximizes the receiver performance by minimizing the photodetector iput parasitics to the TIA and integrally biasing the photodetector to achieve high sensitivity, bandwidth and overload performance . As an integrated product the relaibility is inherently better than a discrete solution, and both the MSM-TIA ntegrated circuit and TO46 flat window and TO46 lens packaged receiver pass strigent reliability requirements. These products are readily designed into receivers and transceivers for Gigabit Ethemet and Fibre Channel applications.It has many unique features: The first one is differential output TIA. The second one is 3.3 V operaiton. The third one is automatic gain control. The forth one is 100 um detector diameter. The fifth one is TO-46 ultra flat window or lens hermetic package,etc.
There are some absolute maximum ratings about AMT8504.Vdd is 6 V . Pin is 5 dBm. Ts is -65 to 125.Otherwise,there are also some electrical characteristics: Wavelength is 770 nm min, 850 nm typ and 860 nm max. Detector diameter is 100 um typ. Small signal differential responsivity is 1000 V/W(50 MHz).Bandwidth is 900 Mhz min. Low frequency cutoff is 300 kHz max. Output resistance is 40 ohm typ.Optical overload is 0 dBm min. Opticak sensitivity is -20 dBm min and -22 dBm typ.Differentialoutput voltage is 1000 mV typ. Duty cycle distortion is 4% typ an 10% max.Total jitter(pk-pk) is 80 ps typ and 120 ps max.
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