Features: • Performance Ranges• Part Identification- AMP374P6453BT1-C1H/S 8k cycles/64ms Ref, TSOP, Gold Contact Plating- PC100 CompliantApplicationMain Memory unit for computer, Microcomputer memory,Refresh memory for CRT.Specifications Item Symbol Rating Unit Voltage on an...
AMP374P6453BT1-C1H: Features: • Performance Ranges• Part Identification- AMP374P6453BT1-C1H/S 8k cycles/64ms Ref, TSOP, Gold Contact Plating- PC100 CompliantApplicationMain Memory unit for computer, Microco...
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Features: • Performance Ranges• Part Identification- AMP374P6453BT1-C1H/S 8k cycles/64...
Item | Symbol | Rating | Unit |
Voltage on any pin relative to Vss | VIN, VOUT | -1.0 - 4.6 | V |
Voltage on VDD supply relative to Vss | VDD, VDDQ | -1.0 - 4.6 | V |
Storage Temperature | Tstg | -55 to + 150 | ºC |
Power Dissipation | Pd | 18 | W |
Short Circuit Current | IOS | 50 | mA |
AVED Memory Products AMP374P6453BT1-C1H/S is a 64M bit X 72 Synchronous Dynamic RAM high density memory module. The AVED Memory Products AMP374P6453BT1-C1H/S consists of eighteen CMOS 32M X 8 bit with 4 banks Synchronous DRAMs in TSOP-II 400mil package and a 2K EEPROM in 8-pin TSSOP package on a 168-pin glass-epoxy substrate. Two 0.1uF decoupling capacitors are mounted on the printed circuit board in parallel for each SDRAM.
The AVED Memory Products AMP374P6453BT1-C1H/S is a Dual In-Line Memory Module and is intended for mounting into 168-pin edge connector sockets. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable latencies allows the same device to be useful for a variety of high bandwidth, high performance memory system applications.