AMMC-6241

Features: • Wide frequency range: 26 - 43 GHz• High gain: 20 dB• Low 50 Noise Figure: 2.7 dB• 50 Input and Output Match• Flat Gain Response• Single 3V Supply BiasApplication• Microwave Radio systems• Satellite VSAT, DBS Up/Down Link• LMDS &am...

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SeekIC No. : 004284908 Detail

AMMC-6241: Features: • Wide frequency range: 26 - 43 GHz• High gain: 20 dB• Low 50 Noise Figure: 2.7 dB• 50 Input and Output Match• Flat Gain Response• Single 3V Supply Bi...

floor Price/Ceiling Price

Part Number:
AMMC-6241
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/5/10

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Product Details

Description



Features:

• Wide frequency range: 26 - 43 GHz
• High gain: 20 dB
• Low 50 Noise Figure: 2.7 dB
• 50 Input and Output Match
• Flat Gain Response
• Single 3V Supply Bias



Application

• Microwave Radio systems
• Satellite VSAT, DBS Up/Down Link
• LMDS & Pt-Pt mmW Long Haul
• Broadband Wireless Access (including 802.16 and 802.20 WiMax)
• WLL and MMDS loops
• Commercial Grade Military



Specifications

Symbol
Parameters
Units
Min
Max
Vd
Positive Drain Voltage
V
7
Vg
Gate Supply Voltage
V
NA
Id
Drain Current
mA
100
Pin
CW Input Power
dBm
15
Tch
Operating Channel Temp.
°C
+150
Tstg
Storage Case Temp.
°C
-65
+150
Tmax
Maximum Assembly Temp (60 sec max)
°C
+300
Note: Operation in excess of any one of these conditions may result in permanent damage to this device.


Description

Agilent's AMMC-6241 is a high gain, low-noise amplifier that operates from 26 GHz to 43 GHz. This LNA provides a wide-band solution for system design since it covers several bands, thus, reduces part inventory. The device has input / output match to 50 Ohm, is unconditionally stable and can be used as either primary or sub-sequential low noise gain stage. By eliminating the complex tuning and assembly processes typically required by hybrid (discrete-FET) amplifiers, the AMMC-6241 is a cost-effective alternative in the 26 - 43 GHz communications receivers. The backside of the chip is both RF and DC ground. This helps simplify the assembly process and reduces assembly related
performance variations and costs. It is fabricated in a PHEMT process to provide exceptional noise and gain performance. For improved reliability and moisture protection, the die is passivated at the active areas.




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