Pinout
SpecificationsStorage Temperature
Plastic Packages . . . . . . . . . . . . . . . 65°C to +150°C
Ambient Temperature
with Power Applied . . . . . . . . . . . . . 65°C to +125°C
Voltage with Respect to Ground
VCC(Note 1) . . . . . . . . . . . . . . . . . 0.5 V to +4.0 V
A9, OE#, and
RESET# (Note 2). . . . . . . . . . . . . .0.5 V to +12.5 V
All other pins (Note 1) . . . . . . . 0.5 V to VCC+0.5 V
Output Short Circuit Current (Note 3) . . . . . . . 200 mADescriptionThe AM29LV200T is a 2 Mbit, 3.0 volt-only Flash memory organized as 262,144 bytes or 131,072 words. The device is offered in 44-pin SO and 48-pin TSOP packages. The word-wide data (x16) appears on DQ15DQ0; the byte-wide (x8) data appears on DQ7DQ0. This device is designed to be programmed in system using only a single 3.0 volt V
CC supply. No V
PP is required for write or erase operations. The device can also be programmed in standard EPROM programmers.
The standard device offers access times of 90, 100,120, and 150 ns, allowing high speed microprocessors to operate without wait states. To eliminate bus contention the device has separate chip enable (CE#), write enable (WE#) and output enable (OE#) controls.
AM29LV200T requires only a single 3.0 volt power supply for both read and write functions. Internally generated and regulated voltages are provided for the program and erase operations.
The device is entirely command set compatible with the JEDEC single-power-supply Flash standard. Commands are written to the command register using standard microprocessor write timings. Register contents serve as input to an internal state-machine that controls the erase and programming circuitry. Write cycles also internally latch addresses and data needed for the programming and erase operations. Reading data out of AM29LV200T is similar to reading from other Flash or EPROM devices.
Device programming occurs by executing the program command sequence. This initiates the Embedded Program algorithm-an internal algorithm that auto matically times the program pulse widths and verifies proper cell margin.