AM29DL324GB-70EI

The AM29DL324GB-70EI is one member of the AM29DL324GB family which is designed as the 32 megabit (4 M x 8-bit/2 M x 16-bit) CMOS 3.0 volt-only, simultaneous operation flash memory device. This device is available with an access time of 70, 90, or 120 ns and is offered in 48-pin TSOP, 48-ball or 63-ball FBGA, and 64-ball Fortified BGA packages.

Features of the AM29DL324GB-70EI are:(1)Simultaneous Read/Write operations: Data can be continuously read from one bank while executing erase / program functions in other bank, and Zero latency between read and write operations;(2)Multiple bank architectures: Three devices available with different bank sizes;(3)Top or bottom boot block;(4)Manufactured on 0.17 m process technology;(5)Compatible with JEDEC standards: Pinout and software compatible with single-power-supply flash standard;(6)High performance: Access time as fast 70 ns and Program time: 4 s/word typical utilizing Accelerate function;(7)Minimum 1 million erase cycles guaranteed per sector;(8)20 year data retention at 125°C: Reliable operation for the life of the system;(9)Supports Common Flash Memory Interface (CFI);(10)Any combination of sectors can be erased.

The absolute maximum ratings of the AM29DL324GB-70EI can be summarized as:(1)Storage Temperature Plastic Packages: -65°C to +150°C;(2)Ambient Temperature with Power Applied: -65°C to +125°C;(3)Voltage with Respect to Ground Vcc: -0.5 V to +4.0 V;(4)Voltage with Respect to Ground A9, OE#, and RESET#: -0.5 V to +12.5 V;(5)Voltage with Respect to Ground WP#/ACC: -0.5 V to +10.5 V;(6)Voltage with Respect to Ground All other pins: -0.5 V to Vcc+0.5 V;(10)Output Short Circuit Current: 200 mA. If you want to know more information about the AM29DL324GB-70EI, please download the datasheet in www.seekic.com or www.chinaicmart.com .