AM1517-025

Specifications

Symbol	Parameter	Value	Unit
PDISS	Power Dissipation* ( Tc50 )	45	W
IC	Device Current*	2.5	A
VCC	Collector-Supply Voltage*	30	V
TJ	Junction Temperature	200	°C
TSTG	Storage Temperature	- 65 to +200	°C

Description

The AM1517-025 power transistor is designed specifically for Satellite communications applications in the 1.5 - 1.7 frequency range.

AM1517-025 is capable of withstanding any mismatch load condition at any phase angle (VSWR 8:1) under full rated conditions. The unit is an overlay, emitter site ballasted, geometry utilizing a refractory/Gold metallization system.

The AM1517-025 is supplied in the AMPACTM Hermetic/Ceramic package with internal Input/ Output matching structures.