AM1011-400

Specifications

Symbol	Parameter	Value	Unit
PDISS	Power Dissipation* (TC  100°C)	880	W
IC	Device Current*	24	A
VCC	Collector-Supply Voltage*	55	V
TJ	Junction Temperature (Pulsed RF Operation)	250	°C
TSTG	Storage Temperature	- 65 to +200	°C

Description

The AM1011-400 device is a high power Class C transistor specifically designed for TCAS and Mode-S pulsed output and driver applications.

AM1011-400 is designed for operation under moderate pulse width and duty cycle pulse conditions and is capable of withstanding 15:1 output VSWR at rated RF conditions. Low RF thermal resistance and computerized automatic wire bonding techniques ensure high reliability and product consistency.

The AM1011-400 is supplied in the BIGPAC] Hermetic Metal/Ceramic package Input/Output matching structures.