AM1011-300

Specifications Symbol Parameter Value Unit PDISS Power Dissipation* (TC 100°C) 1070 W IC Device Current* 36 A VCC Collector-Supply Voltage* 43 V TJ Junction Temperature (Pulsed RF Operation) 250 °C TSTG Storage Temperature - 65 to +200 °CDescriptionThe AM1011-...

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AM1011-300: Specifications Symbol Parameter Value Unit PDISS Power Dissipation* (TC 100°C) 1070 W IC Device Current* 36 A VCC Collector-Supply Voltage* 43 V TJ Junction Temperature...

floor Price/Ceiling Price

Part Number:
AM1011-300
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/9/16

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Product Details

Description



Specifications

Symbol Parameter Value Unit
PDISS Power Dissipation* (TC  100°C) 1070 W
IC Device Current* 36 A
VCC Collector-Supply Voltage* 43 V
TJ Junction Temperature (Pulsed RF Operation) 250 °C
TSTG Storage Temperature - 65 to +200 °C



Description

The AM1011-300 is a rugged, Class C common base device specifically designed for new Mode-S interrogator and transponder applications.Minimal amplitude droop over the heavy Mode-S pulse burst is guaranteed by a thermal design incorporating an overlay site-ballasted die geometry.


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