AM1011-070

Specifications

Symbol	Parameter	Value	Unit
PDISS	Power Dissipation* (TC  100°C)	200	W
IC	Device Current*	8.0	A
VCC	Collector-Supply Voltage*	32	V
TJ	Junction Temperature (Pulsed RF Operation)	250	°C
TSTG	Storage Temperature	- 65 to +200	°C

Description

The AM1011-070 device is a high power Class C transistor specifically designed for L-Band Avionics transponder/interrogator pulsed output and driver applications.

AM1011-070 is capable of operation over a wide range of pulse widths, duty cycles and temperatures and is capable of withstanding severe output VSWR at rated RF conditions. Low RF thermal resistance and computerized automatic wire bonding techniques ensure high reliability and product consistency.

The AM1011-070 is supplied in the AMPAC] Hermetic Metal/Ceramic package with internal Input/Output matching structures.