Features: Low Conversion Loss, 8 dBInsensitive to LO Power VariationsImage Rejection, 20 dBNo DC Bias RequiredRequires External IF 90° HybridSpecificationsCharacteristic ValueOperating Temperature -55°C to +125°CStorage Temperature -65°C to +150°CTotal Input Power (RF + LO) 23 dBmDescriptionAlpha'...
AM028R1-00: Features: Low Conversion Loss, 8 dBInsensitive to LO Power VariationsImage Rejection, 20 dBNo DC Bias RequiredRequires External IF 90° HybridSpecificationsCharacteristic ValueOperating Temperature -...
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Features: Low Conversion Loss, 6.5 dBInsensitive to LO Power VariationsHigh LO to RF Isolation, 27...
Features: Surface Mount PackageLow Conversion Loss, 7 dBHigh Isolation, 25 dBWide IF Bandwidth, 06...
Features: Low Conversion Loss, 6.0 dBLow LO Power Requirement, 8 dBmWide IF Bandwidth, 05 GHzNo DC...
Alpha's image rejection balanced GaAs Schottky diode mixer has a typical conversion loss of 8 dB at an LO power level as low as 11 dBm over the band 2633 GHz. An external 90° IF hybrid is required to combine the IF1 and
IF2 signals at the desired IF frequency. The chip uses Alpha's proven Schottky diode technology, and is based
upon MBE layers for the highest uniformity and repeatability. AM028R1-00 employs surface passivation to ensure a rugged, reliable part with through-substrate via holes and gold-based backside metallization to facilitate an epoxy die attach process. All chips are screened for DC diode parameters and lot samples are RF measured to guarantee performance. AM028R1-00 is recommended for applications requiring down conversion.