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ALD1121EPAL

MOSFET Dual EPAD(R) N-Ch

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SeekIC No. : 00164479 Detail

ALD1121EPAL: MOSFET Dual EPAD(R) N-Ch

ALD1121EPAL Data Sheet

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Part Number:
ALD1121EPAL
Mfg:
Advanced Linear Devices
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 10 V
Gate-Source Breakdown Voltage : +/- 6.6 V Continuous Drain Current : 3 mA
Resistance Drain-Source RDS (on) : 500 Ohms Configuration : Dual
Maximum Operating Temperature : + 70 C Mounting Style : Through Hole
Package / Case : PDIP-8    

Description

Packaging :
Transistor Polarity : N-Channel
Mounting Style : Through Hole
Configuration : Dual
Resistance Drain-Source RDS (on) : 500 Ohms
Drain-Source Breakdown Voltage : 10 V
Maximum Operating Temperature : + 70 C
Package / Case : PDIP-8
Continuous Drain Current : 3 mA
Gate-Source Breakdown Voltage : +/- 6.6 V


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