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ALD1116

Features: • Low threshold voltage of 0.7V• Low input capacitance• Low Vos 2mV typical• High input impedance -- 1014W typical• Negative current (IDS) temperature coefficient• Enhancement-mode (normally off)• DC current gain 109• Low input and output l...

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SeekIC No. : 004279724 Detail

ALD1116: Features: • Low threshold voltage of 0.7V• Low input capacitance• Low Vos 2mV typical• High input impedance -- 1014W typical• Negative current (IDS) temperature coeffic...

ALD1116 Data Sheet

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Part Number:
ALD1116
Supply Ability:
5000

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  • 1~5000
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Product Details

Description



Features:

• Low threshold voltage of 0.7V
• Low input capacitance
• Low Vos 2mV typical
• High input impedance -- 1014W typical
• Negative current (IDS) temperature coefficient
• Enhancement-mode (normally off)
• DC current gain 109
• Low input and output leakage currents


Application

• Precision current mirrors
• Precision current sources
• Voltage choppers
• Differential amplifier input stage
• Voltage comparator
• Data converters
• Sample and Hold
• Analog signal processing


Pinout

Connection Diagram


Specifications

Drain-source voltage, VDS                                                      13.2V
Gate-source voltage, VGS                                                       13.2V
Power dissipation                                                                   500 mW
Operating temperature range PA, SA, PB, SB package           0°C to +70°C
DA, DB package                                                                     -55°C to +125°C
Storage temperature range                                                   -65°C to +150°C
Lead temperature, 10 seconds                                             +260°C


Description

The ALD1106/ALD1116 are monolithic quad/dual N-channel enhancement mode matched MOSFET transistor arrays intended for a broad range of precision analog applications. The ALD1106/ALD1116 offer high input impedance and negative current temperature coefficient. The transistor pairs are matched for minimum offset voltage and differential thermal response, and they are designed for switching and amplifying applications in +2V to +12V systems where low input bias current, low input capacitance and fast switching speed are desired. These MOSFET devices feature very
large (almost infinite) current gain in a  low frequency, or near DC, operating environment. The ALD1106/ALD1116 are building blocks for differential amplifier input stages, transmission gates, and multiplexer applications  current sources and many precision analog circuits. 




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