ALD1103

SpecificationsDrain-source voltage, VDS13.2VGate-source voltage, VGS 13.2VPower dissipation 500 mWOperating temperature range PB, SB package 0°C to +70°CDB package-55°C to +125°CStorage temperature range -65°C to +150°CLead temperature, 10 seconds+260°CDescriptionThe ALD1103 is a monolithic dual N...

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SeekIC No. : 004279687 Detail

ALD1103: SpecificationsDrain-source voltage, VDS13.2VGate-source voltage, VGS 13.2VPower dissipation 500 mWOperating temperature range PB, SB package 0°C to +70°CDB package-55°C to +125°CStorage temperature ...

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Part Number:
ALD1103
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/24

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Product Details

Description



Specifications

Drain-source voltage, VDS                                                       13.2V
Gate-source voltage, VGS                                                        13.2V
Power dissipation                                                                    500 mW
Operating temperature range PB, SB package                        0°C to +70°C
                                                      DB package                        -55°C to +125°C
Storage temperature range                                                    -65°C to +150°C
Lead temperature, 10 seconds                                               +260°C



Description

The ALD1103 is a monolithic dual N-channel and dual P-channel matched transistor pair intended for a broad range of analog applications. These enhancement-mode transistors are manufactured with Advanced Linear Devices' enhanced ACMOS silicon gate CMOS process. It consists of an ALD1101 N-channel MOSFET pair and an ALD1102 P-channel MOSFET pair in one package.

The ALD1103 offers high input impedance and negative current temperature coefficient. The ALD1103 transistor pair is matched for minimum offset voltage and differential thermal response, and it is designed for precision signa  switching and amplifying applications in +2V to +12V systems where low input bias current, low input capacitance and fast switching speed are desired. Since these are MOSFET devices, they feature very large (almost infinite) current gain in a low frequency, or near DC, operating environment. When used in pairs, a dual CMOS analog switch can be constructed. In addition, the ALD1103 is intended as a building block for differential amplifier input stages, transmission gates, and multiplexer applications.

The ALD1103 is suitable for use in precision applications which require very high current gain, beta, such as current mirrors and current sources. The high input impedance and the high DC current gain of the Field Effect Transistors result in extremely low current loss through the control gate. The DC current gain is limited by the gate input leakage current, which is specified at 50pA at room temperature. For example, DC beta of the device at a drain current of 5mA at 25°C is = 5mA/50pA = 100,000,000.




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