AH212

Features: `1800 -2400 MHz`26 dB Gain`+30 dBm P1dB`+46 dBm Output IP3`+5V Single Positive Supply`Internal Active Bias`Lead-free/green/RoHS-compliant SOIC-8 & 4x5mm DFN PackageApplication·Mobile Infrastructure·WiBro Infrastructure·TD-SCDMAPinoutSpecificationsOperating Case Temperature..............

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AH212 Picture
SeekIC No. : 004278795 Detail

AH212: Features: `1800 -2400 MHz`26 dB Gain`+30 dBm P1dB`+46 dBm Output IP3`+5V Single Positive Supply`Internal Active Bias`Lead-free/green/RoHS-compliant SOIC-8 & 4x5mm DFN PackageApplication·Mobile I...

floor Price/Ceiling Price

Part Number:
AH212
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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268 Transactions

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Upload time: 2024/11/21

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Product Details

Description



Features:

 `1800 -2400 MHz
 `26 dB Gain
 `+30 dBm P1dB
 `+46 dBm Output IP3
 `+5V Single Positive Supply
 `Internal Active Bias
 `Lead-free/green/RoHS-compliant
  SOIC-8 & 4x5mm DFN Package



Application

 ·Mobile Infrastructure
 ·WiBro Infrastructure
 ·TD-SCDMA



Pinout

  Connection Diagram


Specifications

Operating Case Temperature........... -40 to +85
Storage Temperatur.........................-65 to +150
RF Input Power (continuous) ..................+26 dBm
Device Voltage.............................................. +7 V
Device Current.......................................... 900 mA
Device Power ..................................................5 W
Junction Temperature.............................. .+250



Description

The AH212 is a high dynamic range two-stage driver amplifier in a low-cost surface mount package. The InGaP/GaAs HBT is able to achieve superior performance for various narrowband-tuned application circuits with up to +46 dBm OIP3 and +30 dBm of compressed 1-dB power. The amplifier is available in an industry-standard SMT lead-free/green/RoHS-compliant SOIC-8 or 4x5mm DFN package. All devices are 100% RF and DC tested.

The AH212 is targeted for use as linear driver amplifier for various current and next generation wireless technologies such as GPRS, GSM, CDMA, W-CDMA, TD-SCDMA, and WiBro, where high linearity and high power is required. The internal active bias allows the AH212 to maintain high linearity over temperature and operate
directly off a +5 V supply.




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