Features: `1800 -2400 MHz`26 dB Gain`+30 dBm P1dB`+46 dBm Output IP3`+5V Single Positive Supply`Internal Active Bias`Lead-free/green/RoHS-compliant SOIC-8 & 4x5mm DFN PackageApplication·Mobile Infrastructure·WiBro Infrastructure·TD-SCDMAPinoutSpecificationsOperating Case Temperature..............
AH212: Features: `1800 -2400 MHz`26 dB Gain`+30 dBm P1dB`+46 dBm Output IP3`+5V Single Positive Supply`Internal Active Bias`Lead-free/green/RoHS-compliant SOIC-8 & 4x5mm DFN PackageApplication·Mobile I...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
The AH212 is a high dynamic range two-stage driver amplifier in a low-cost surface mount package. The InGaP/GaAs HBT is able to achieve superior performance for various narrowband-tuned application circuits with up to +46 dBm OIP3 and +30 dBm of compressed 1-dB power. The amplifier is available in an industry-standard SMT lead-free/green/RoHS-compliant SOIC-8 or 4x5mm DFN package. All devices are 100% RF and DC tested.
The AH212 is targeted for use as linear driver amplifier for various current and next generation wireless technologies such as GPRS, GSM, CDMA, W-CDMA, TD-SCDMA, and WiBro, where high linearity and high power is required. The internal active bias allows the AH212 to maintain high linearity over temperature and operate
directly off a +5 V supply.