Features: • 800 1000 MHz• +28 dBm P1dB• +42 dBm Output IP3• 17 dB Gain• Single Positive Supply (+5 V)• MTBF >100 Years• SOIC-8 SMT PackagePinoutSpecifications Parameters Rating RF Input Power (continuous) +20 dBm DC Voltage / Current +8 V...
AH116: Features: • 800 1000 MHz• +28 dBm P1dB• +42 dBm Output IP3• 17 dB Gain• Single Positive Supply (+5 V)• MTBF >100 Years• SOIC-8 SMT PackagePinoutSpecific...
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Parameters | Rating |
RF Input Power (continuous) | +20 dBm |
DC Voltage / Current | +8 V / 400 mA |
DC Dissipation Power | 2W |
The AH116 is a high dynamic range driver amplifier in a low-cost surface mount package. The InGaP/GaAs HBT is able to achieve high performance over a broad frequency range with +42 dBm OIP3 and +28 dBm of compressed 1-dB power and is housed in an industry standard SOIC-8 SMT package. All devices are 100% RF and DC tested.
The product is targeted for use as a driver amplifier for wireless infrastructure where high linearity and medium power is required. The internal active bias allows the AH116 to maintain high linearity over temperature and operate directly off a +5 V supply. This combination makes the device an excellent fit for transceiver line cards and power amplifiers in current and next generation multi-carrier 3G base stations.