Transistors RF MOSFET Power RF LDMOS Transistor
AGR19045EF: Transistors RF MOSFET Power RF LDMOS Transistor
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| Configuration : | Single | Transistor Polarity : | N-Channel |
| Frequency : | 1.93 GHz to 1.99 GHz | Gain : | 15 dB |
| Output Power : | 9.5 W | Drain-Source Breakdown Voltage : | 65 V |
| Gate-Source Breakdown Voltage : | 15 V | Maximum Operating Temperature : | + 150 C |
| Package / Case : | 19045EF |