Transistors RF MOSFET Power RF LDMOS Transistor
AGR19045EF: Transistors RF MOSFET Power RF LDMOS Transistor
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Configuration : | Single | Transistor Polarity : | N-Channel |
Frequency : | 1.93 GHz to 1.99 GHz | Gain : | 15 dB |
Output Power : | 9.5 W | Drain-Source Breakdown Voltage : | 65 V |
Gate-Source Breakdown Voltage : | 15 V | Maximum Operating Temperature : | + 150 C |
Package / Case : | 19045EF |