AGR18125EF

Transistors RF MOSFET Power RF LDMOS Transistor

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SeekIC No. : 00220792 Detail

AGR18125EF: Transistors RF MOSFET Power RF LDMOS Transistor

floor Price/Ceiling Price

Part Number:
AGR18125EF
Mfg:
TriQuint Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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268 Transactions

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Upload time: 2024/11/14

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Product Details

Quick Details

Configuration : Single Transistor Polarity : N-Channel
Frequency : 1.8 GHz to 1.88 GHz Gain : 13.5 dB
Output Power : 125 W Drain-Source Breakdown Voltage : 65 V
Gate-Source Breakdown Voltage : 15 V Maximum Operating Temperature : + 150 C
Package / Case : 18125EF    

Description

Continuous Drain Current :
Packaging :
Configuration : Single
Transistor Polarity : N-Channel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 65 V
Gate-Source Breakdown Voltage : 15 V
Gain : 13.5 dB
Frequency : 1.8 GHz to 1.88 GHz
Output Power : 125 W
Package / Case : 18125EF


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