Transistors RF MOSFET Power RF LDMOS Transistor
AGR18060EF: Transistors RF MOSFET Power RF LDMOS Transistor
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Configuration : | Single | Transistor Polarity : | N-Channel | ||
Frequency : | 1.8 GHz to 1.88 GHz | Gain : | 14 dB | ||
Output Power : | 60 W | Drain-Source Breakdown Voltage : | 65 V | ||
Continuous Drain Current : | 6.2 A | Gate-Source Breakdown Voltage : | 15 V | ||
Maximum Operating Temperature : | + 150 C | Package / Case : | 8060EF |