Transistors RF MOSFET Power RF LDMOS Transistor
AGR09045WEF: Transistors RF MOSFET Power RF LDMOS Transistor
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Configuration : | Single | Transistor Polarity : | N-Channel | ||
Frequency : | 865 MHz to 895 MHz | Gain : | 20 dB | ||
Output Power : | 10 W | Drain-Source Breakdown Voltage : | 65 V | ||
Continuous Drain Current : | 4.25 A | Gate-Source Breakdown Voltage : | 15 V | ||
Maximum Operating Temperature : | + 150 C | Package / Case : | 9045EF |