AGB3312

Features: · On-chip Active Bias· DC-7000 MHz Operation Bandwidth· +42 dBm Output IP3 at 850 MHz· 5 dB Noise Figure at 850 MHz· 11 dB Gain· +17 dBm P1dB· SOT-89 Package· Single +5 V Supply· Case Temperature: -40 to +85 °CApplication· Cellular Base Stations for W-CDMA, CDMA, TDMA, GSM, PCS and CDPD ...

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SeekIC No. : 004278606 Detail

AGB3312: Features: · On-chip Active Bias· DC-7000 MHz Operation Bandwidth· +42 dBm Output IP3 at 850 MHz· 5 dB Noise Figure at 850 MHz· 11 dB Gain· +17 dBm P1dB· SOT-89 Package· Single +5 V Supply· Case Temp...

floor Price/Ceiling Price

Part Number:
AGB3312
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Month Sales

268 Transactions

Rating

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Upload time: 2024/11/21

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Product Details

Description



Features:

· On-chip Active Bias
· DC-7000 MHz Operation Bandwidth
· +42 dBm Output IP3 at 850 MHz
· 5 dB Noise Figure at 850 MHz
· 11 dB Gain
· +17 dBm P1dB
· SOT-89 Package
· Single +5 V Supply
· Case Temperature: -40 to +85 °C



Application

· Cellular Base Stations for W-CDMA, CDMA,
  TDMA, GSM, PCS and CDPD systems
· Fixed Wireless
· MMDS/WLL
· WLAN



Specifications

PARAMETER MIN MAX UNIT
Device Voltage (VCC) 0 +6 VDC
RF Input Power (PIN) - +10 dBm
Storage Temperature (TSTG) -40 +150 °C
Junction Temperature - +200 °C



Description

The AGB3312 is one of a series of high performance InGaP HBT amplifiers designed for use in applications requiring high linearity, low noise, and low distortion. Active bias circuits on-chip eliminate the need for external resistive feedback, and no external matching components are needed for insertion into a 50 system. With a high output IP3, low noise figure, and wide band operation, the AGB3312 is ideal for wireless infrastructure applications such as Cellular Base Stations, MMDS, and WLL. Offered in a low cost SOT-89 surface mount package, it requires a single +5 V supply, and typically consumes 0.4 Watts of power.




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