Features: · On-chip Active Bias· DC-3500 MHz Operation Bandwidth· +35 dBm Output IP3· 5 dB Noise Figure at 850 MHz· 15 dB Gain at 850 MHz· +18 dBm P1dB· SOT-89 Package· Single +5 V Supply· Case Temperature: -40 to +85 °CApplication· Cellular Base Stations for W-CDMA, CDMA, TDMA, GSM, PCS and CDPD ...
AGB3309: Features: · On-chip Active Bias· DC-3500 MHz Operation Bandwidth· +35 dBm Output IP3· 5 dB Noise Figure at 850 MHz· 15 dB Gain at 850 MHz· +18 dBm P1dB· SOT-89 Package· Single +5 V Supply· Case Temp...
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PARAMETER | MIN | MAX | UNIT |
Device Voltage (VCC) | 0 | +6 | VDC |
RF Input Power (PIN) | - | +10 | dBm |
Storage Temperature (TSTG) | -40 | +150 | °C |
Junction Temperature | - | +200 | °C |
The AGB3309 is one of a series of high performance InGaP HBT amplifiers designed for use in applications requiring high linearity, low noise, and low distortion. Active bias circuits on-chip eliminate the need for external resistive feedback, and no external matching components are needed for insertion into a 50 system. With a high output IP3, low noise figure, and wide band operation, the AGB3309 is ideal for wireless infrastructure applications such as Cellular Base Stations, MMDS, and WLL. Offered in a low cost SOT-89 surface mount package, it requires a single +5 V supply, and typically consumes 0.325 Watts of power.