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AFP02N8-213

Features: ·Low Noise Figure, 1.55 dB @ 4 GHz·High Associated Gain, 13 dB @ 4 GHz·High MAG, > 15 dB @ 4 GHz·0.7 mm Ti/Pd/Au Gates·Passivated Surface·Low Cost Metal Ceramic Package·Available with Two Lead Lengths·Available in Tape and Reel PackagingSpecifications Characteristic Value D...

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SeekIC No. : 004278555 Detail

AFP02N8-213: Features: ·Low Noise Figure, 1.55 dB @ 4 GHz·High Associated Gain, 13 dB @ 4 GHz·High MAG, > 15 dB @ 4 GHz·0.7 mm Ti/Pd/Au Gates·Passivated Surface·Low Cost Metal Ceramic Package·Available with T...

AFP02N8-213 Data Sheet

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Part Number:
AFP02N8-213
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/30

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Product Details

Description



Features:

·Low Noise Figure, 1.55 dB @ 4 GHz
·High Associated Gain, 13 dB @ 4 GHz
·High MAG, > 15 dB @ 4 GHz
·0.7 mm Ti/Pd/Au Gates
·Passivated Surface
·Low Cost Metal Ceramic Package
·Available with Two Lead Lengths
·Available in Tape and Reel Packaging


Specifications

Characteristic
Value
Drain to Source Voltage (VDS)
6 V
Gate to Source Voltage (VGS)
-3 V
Drain Current (IDS)
IDSS
Gate Current (IGS)
10 A
Total Power Dissipation (PT)
300 mW
Storage Temperature (TST)
-65 to +150°C
Channel Temperature (TCH)
175°C



Description

The AFP02N8-212, 213 are general purpose packaged PHEMT chips that have excellent gain and noise performance through X band, making them suitable for a wide range of commercial applications. The AFP02N8-212, 213  employ 0.7 mm Ti/Pd/Au gates and surface passivation to ensure a rugged, reliable part. Available in metal ceramic packages with a choice of two lead lengths. The components are also available in tape and reel and are ready for automatic insertion equipment.




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