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AF9928N

Features: - Low On-resistance- Capable of 2.5V Gate Drive- Optimal DC/DC battery applicationPinoutSpecifications Symbol Parameter Rating Units VDS Drain-Source Voltage 20 V VGS Gate-Source Voltage ±12 V ID Continuous Drain Current (Note 1) TA=25ºC 5 A TA=70º...

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SeekIC No. : 004278472 Detail

AF9928N: Features: - Low On-resistance- Capable of 2.5V Gate Drive- Optimal DC/DC battery applicationPinoutSpecifications Symbol Parameter Rating Units VDS Drain-Source Voltage 20 V VGS Gat...

AF9928N Data Sheet

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Part Number:
AF9928N
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

- Low On-resistance
- Capable of 2.5V Gate Drive
- Optimal DC/DC battery application


Pinout

Connection Diagram


Specifications

Symbol Parameter Rating Units
VDS Drain-Source Voltage 20 V
VGS Gate-Source Voltage ±12 V
ID Continuous Drain Current (Note 1) TA=25ºC 5 A
TA=70ºC 3.5
IDM Pulsed Drain Current (Note 2) 25 A
PD Total Power Dissipation TA=25ºC 1 W
Linear Derating Factor 0.008
TJ Storage Temperature Range -55 to 150 ºC
TSTG Operating Junction Temperature Range -55 to 150 ºC



Description

The AF9928N advanced power MOSFET provides the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.


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