Features: · Advanced trench process technology· High density cell design for ultra low on-resistance· Excellent thermal and electrical capabilities· Compact and low profile SOT-23 packageSpecifications Symbol Parameter Rating Unit VDS Drain-Source Voltage 20 V VGS Gate-Source Vol...
AF2302N: Features: · Advanced trench process technology· High density cell design for ultra low on-resistance· Excellent thermal and electrical capabilities· Compact and low profile SOT-23 packageSpecificati...
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Symbol | Parameter | Rating | Unit |
VDS | Drain-Source Voltage | 20 | V |
VGS | Gate-Source Voltage | ±8 | V |
ID | Continuous Drain Current | 2.4 | A |
IDM | Pulsed Drain Current | 10 | A |
PD | Total powei Derting Ta=25 Ta=70 |
1.25 0.8 |
W |
TJ | Operating Junction Temperature | +150 | |
TJ, TSTG | Operating Junction and Storage Temperature Range | -55 to +150 |