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AF002C1-39

Features: · Low Cost SOT-23 Package·Series or Shunt Configuration· Low DC Current Drain· Ideal Switch Building Blocks· Pin Diode Replacements· High Power Antenna SwitchesSpecificationsRF Input Power ... 2 W > 500 MHz 0/-8 V.......... 0.5 W @ 50 MHz 0/-8 VControl Voltage.........+0.2 V, -10 VOpe...

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SeekIC No. : 004278431 Detail

AF002C1-39: Features: · Low Cost SOT-23 Package·Series or Shunt Configuration· Low DC Current Drain· Ideal Switch Building Blocks· Pin Diode Replacements· High Power Antenna SwitchesSpecificationsRF Input Power...

AF002C1-39 Data Sheet

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Part Number:
AF002C1-39
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

· Low Cost SOT-23 Package
·Series or Shunt Configuration
· Low DC Current Drain
· Ideal Switch Building Blocks
· Pin Diode Replacements
· High Power Antenna Switches


Specifications

RF Input Power ... 2 W > 500 MHz 0/-8 V
..........  0.5 W @ 50 MHz 0/-8 V
Control Voltage.........+0.2 V, -10 V
Operating Temperature ..-40°C to +85°C
Storage Temperature .. -65°C to +150°C
QJC ...................25°C/W


Description

This group of GaAs control FETs can be used in both series and shunt configurations.They incorporate on-chip circuitry that eliminates the need for extra bias components and minimizes power drain to typically 25 W. These features of AF002C1-39 make the device ideal replacements for PIN diodes, where low DC drain is critical.

Isolation performance degrades at higher frequencies due to package parasitics. AF002C1-39   can be tuned out in narrow band applications as shown in the circuit examples on the following pages.




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