Features: •JEDEC standard LVTTL 3.3V power supply•MRS Cycle with address key programs-CAS Latency (2 & 3)-Burst Length (1,2,4,8,& full page)-Burst Type (sequential & Interleave)•4 banks operation•All inputs are sampled at the positive edge of the system clock...
ADS8616A8A: Features: •JEDEC standard LVTTL 3.3V power supply•MRS Cycle with address key programs-CAS Latency (2 & 3)-Burst Length (1,2,4,8,& full page)-Burst Type (sequential & Interlea...
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Parameter |
Symbol |
Value |
Unit |
Voltage on any pin relative to Vss |
VIN,Vout |
-0.3 ~VDD+0.3 |
V |
Voltage on VDD supply relative to Vss |
VDD,VDDQ |
-0.3 ~ 4.6 |
V |
Storage temperature |
TSTG |
-55 ~ +150 |
|
Power dissipation |
PD |
1 |
W |
Short circuit current |
IOUT |
50 |
mA |
Note : Permanent device damage may occur if ABSOLUTE MAXIMUM RATING are exceeded.Functional operation should be restricted to recommended operating condition.Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
The ADS8616A8A are four-bank Synchronous DRAMs organized as 4,194,304 words x 16 bits x 4 banks,Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle.
Range of operating frequencies, programmable burst length and programmable latencies allow the ADS8616A8A to be useful for a variety of high bandwidth high performance memory system applications.