Features: •JEDEC standard LVTTL 3.3V power supply•MRS Cycle with address key programs-CAS Latency (2 & 3)-Burst Length (1,2,4,8,& full page)-Burst Type (sequential & Interleave)•4 banks operation•All inputs are sampled at the positive edge of the system clock...
ADS8608A8A: Features: •JEDEC standard LVTTL 3.3V power supply•MRS Cycle with address key programs-CAS Latency (2 & 3)-Burst Length (1,2,4,8,& full page)-Burst Type (sequential & Interlea...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Parameter |
Symbol |
Value |
Unit |
Voltage on any pin relative to Vss |
VIN,Vout |
-0.3 ~VCC+0.3 |
V |
Voltage on VDD supply relative to Vss |
VDD,VDDQ |
-0.3 ~ 4.6 |
V |
Storage temperature |
TSTG |
-55 ~ +150 |
|
Power dissipation |
PD |
1 |
W |
Short circuit current |
IOUT |
50 |
mA |
The ADS8608A8A are four-bank Synchronous DRAMs organized as 8,388,608 words x 8 bits x 4 banks. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle.
Range of operating frequencies, programmable burst length and programmable latencies allow the ADS8608A8A to be useful for a variety of high bandwidth high performance memory system applications