ADS6632A4A

Features: •JEDEC standard LVTTL 3.3V power supply•MRS Cycle with address key programs-CAS Latency (2 & 3)-Burst Length (1,2,3,8,& full page)-Burst Type (sequential & Interleave)•4 banks operation•All inputs are sampled at the positive edge ofthe system clockR...

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ADS6632A4A Picture
SeekIC No. : 004277180 Detail

ADS6632A4A: Features: •JEDEC standard LVTTL 3.3V power supply•MRS Cycle with address key programs-CAS Latency (2 & 3)-Burst Length (1,2,3,8,& full page)-Burst Type (sequential & Interlea...

floor Price/Ceiling Price

Part Number:
ADS6632A4A
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/2/15

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Product Details

Description



Features:

•JEDEC standard LVTTL 3.3V power supply
•MRS Cycle with address key programs
-CAS Latency (2 & 3)
-Burst Length (1,2,3,8,& full page)
-Burst Type (sequential & Interleave)
•4 banks operation
•All inputs are sampled at the positive edge of
the system clock
•Burst Read single write operation
•Auto & Self refresh
•4096 refresh cycle
•DQM for masking
•Package:86-pins 400 mil TSOP-Type II



Pinout

  Connection Diagram


Specifications

Parameter
Symbol Value
Unit
Voltage on any pin relative to Vss
Voltage on VDD supply relative to Vss
Storage temperature
Power dissipation
Short circuit current
VIN, Vout
VDD, VDDQ
TSTG
PD
IOS
-1.0 ~ 4.6
-1.0 ~ 4.6
-55 ~ +150
1
50
V
V

W
mA
Note : Permanent device damage may occur if ABSOLUTE MAXIMUM RATING are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.



Description

The ADS6632A4A are four-bank Synchronous DRAMs organized as 524,288 words x 32 bits x 4 banks, Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth high performance memory system applications




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