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ADS6608A4A

Features: •JEDEC standard LVTTL 3.3V power supply•MRS Cycle with address key programs-CAS Latency (2 & 3)-Burst Length (1,2,4,8,& full page)-Burst Type (sequential & Interleave)•4 banks operation•All inputs are sampled at the positive edge of the system clock...

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SeekIC No. : 004277178 Detail

ADS6608A4A: Features: •JEDEC standard LVTTL 3.3V power supply•MRS Cycle with address key programs-CAS Latency (2 & 3)-Burst Length (1,2,4,8,& full page)-Burst Type (sequential & Interlea...

ADS6608A4A Data Sheet

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Part Number:
ADS6608A4A
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

•JEDEC standard LVTTL 3.3V power supply
•MRS Cycle with address key programs
-CAS Latency (2 & 3)
-Burst Length (1,2,4,8,& full page)
-Burst Type (sequential & Interleave)
•4 banks operation
•All inputs are sampled at the positive edge of the system clock
•Burst Read single write operation
•Auto & Self refresh
•4096 refresh cycle
•DQM for masking
•Package:54-pins 400 mil TSOP-Type II


Pinout

Connection Diagram


Specifications

Parameter Symbol Value Unit
Voltage on any pin relative to Vss VIN, VOUT -1.0 ~ 4.6 V
Voltage on VDD supply relative to Vss VDD, VDDQ -1.0 ~ 4.6 V
Storage temperature TSTG -55 ~ +150
Power dissipation PD 1 W
Short circuit current IOS 50 mA



Description

The ADS6608A4A are four-bank Synchronous DRAMs organized as 2,097,152 words x 8 bits x 4 banks. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth high performance memory system applications




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