Features: •Single 3.3V +/- 0.3V power supply•MRS Cycle with address key programs-CAS Latency (2 & 3)-Burst Length (1,2,4,8, & full page)-Burst Type (sequential & Interleave)•2 banks operation•All inputs are sampled at the positive edge of the system clock•...
ADS4616A4A: Features: •Single 3.3V +/- 0.3V power supply•MRS Cycle with address key programs-CAS Latency (2 & 3)-Burst Length (1,2,4,8, & full page)-Burst Type (sequential & Interleave)&...
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Data Conversion IC Development Tools ADS4122 Eval Mod
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Data Conversion IC Development Tools ADS4125 Eval Mod
Parameter | Symbol | Value | Unit |
Voltage on any pin relative to Vss | VIN, VOUT | -0.3~ 4.6 | V |
Voltage on VDD supply relative to Vss | VDD, VDDQ | -0.3~ 4.6 | V |
Storage temperature | TSTG | -55 ~ +150 | |
Power dissipation | PD | 1 | W |
Short circuit current | IOS | 50 | mA |
The ADS4616A4A are two-bank Synchronous DRAMs organized as 524,288 words x 16 bits x 2 banks, Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth high performance memory system applications