Features: Wideband switch: −3 dB @ 4 GHz ADG936 absorptive dual SPDT ADG936-R reflective dual SPDT High off isolation (36 dB @ 1 GHz) Low insertion loss (0.9 dB dc to 1 GHz) Single 1.65 V to 2.75 V power supply CMOS/LVTTL control logic 20-lead TSSOP and 4 mm * 4 mm LFCSP packages Low power ...
ADG936-R: Features: Wideband switch: −3 dB @ 4 GHz ADG936 absorptive dual SPDT ADG936-R reflective dual SPDT High off isolation (36 dB @ 1 GHz) Low insertion loss (0.9 dB dc to 1 GHz) Single 1.65 V to ...
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Parameter | Rating |
VDD to GND Inputs to GND Continuous Current Input Power Operating Temperature Range Industrial (B Version) Storage Temperature Range Junction Temperature TSSOP Package JA Thermal Impedance LFCSP Package JA Thermal Impedance (4-Layer Board) Lead Temperature, Soldering (10 sec) IR Reflow, Peak Temperature (<20 sec) ESD |
0.5 V to +4 V 0.5 V to VDD + 0.3 V1 30 mA 18 dBm 40°C to +85°C 65°C to +150°C 150°C 143°C/W 30.4°C/W 300°C 235°C 1 kV |
The ADG936/ADG936-R are wideband analog switches that comprise two independently selectable SPDT switches using a CMOS process to provide high isolation and low insertion loss to 1 GHz. The ADG936/ADG936-R are absorptive/matched dual SPDT with 50 terminated shunt legs; theADG936/ADG936-R are reflective dual SPDT. These devices are designed such that the isolation is high over the dc to 1 GHz frequency range. They have on-board CMOS control logic, eliminating the need for external controlling circuitry. The control inputs are both CMOS and LVTTL compatible. The low power consumption of these CMOS devices makes them ideally suited for wireless applications and general-purpose high frequency switching.