ADD8616A8A

Features:

•2.5V for VDDQ power supply
•SSTL_2 interface
•MRS Cycle with address key programs
-CAS Latency (2, 2.5)
-Burst Length (2,4 &8)
-Burst Type (sequential & Interleave)
•4 banks operation
•Differential clock input (CK, /CK) operation
•Double data rate interface
•Auto & Self refresh
•8192 refresh cycle
•DQM for masking
•Package:66-pins 400 mil TSOP-Type II


Pinout




Specifications

Voltage on any pin relative to Vss                  V_IN, V_out                   -0.3 ~ VDDQ+0.3               V
Voltage on VDD supply relative to Vss            V_DD, V_DDQ                 -0.3 ~ 3.6                         V
Storage temperature                                      TSTG                         -55 ~ +150                       
Power dissipation                                            PD                            1                                       W
Short circuit current                                         IOUT                         50                                     mA


Description

The ADD8616A8A are four-bank Double Data Rate(DDR) Synchronous DRAMs organized as 4,194,304 words x 16 bits x 4 banks,  Synchronous design allows precise cycle control  with the use of system clock I/O transactions are  possible on every clock cycle.  Data outputs occur at both rising edges of CK and
/CK.  Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high
bandwidth high performance memory system  applications