ACTF512K8

Features:

` Low Power Monolithic 512K x 8 FLASH
` TTL Compatible Inputs and CMOS Outputs
` Access Times of 60, 70, 90, 120 and 150ns
` +5V Programing, 5V ±10% Supply
` 100,000 Erase / Program Cycles
` Low Standby Current
` Page Program Operation and Internal Program Control Time
` Supports Full Chip Erase
` Embedded Erase and Program Algorithms
` Supports Full Chip Erase
` MIL-PRF-38534 Compliant Circuits Available
` Industry Standard Pinouts
` Packaging Hermetic Ceramic
    32 Lead, 1.6" x .6" x .20" Dual-in-line Package (DIP), Aeroflex code# "P4"
    32 Lead, .82" x .41" x .11" Ceramic Flat Package  (FP), Aeroflex code# "F6"
    32 Lead, .82" x .41" x .132" Ceramic Flat Package (FP Lead Formed), Aeroflex code# "F7"
` Sector Architecture
   8 Equal size sectors of 64K bytes each
   Any Combination of Sectors ccan be erased with one ommand sequence.
` Commercial, Industrial and Military emperature Ranges
` DESC SMD Pending 5962-96692 (P4,F6,F7)


Specifications

Parameter	Symbol	Range	Units
Case Operating Temperature	TC	-55 to +125	°C
Storage Temperature Range	TSTG	-65 to +150	°C
Supply Voltage Range	VCC	-2.0 to +7.0	V
Signal Voltage Range (Any Pin Except A9) Note 1	VG	-2.0 to +7.0	V
Maximum Lead Temperature (10 seconds)		300	°C
Data Retention		10	Years
Endurance (Write/Erase cycles)		100,000 Minimum
A9 Voltage for sector protect, Note 2	VID	-2.0 to +14.0	V

Description

The ACTF512K8 is a high speed, 4 megabit CMOS monolithic Flash module designed for full temperature range military, space, or high reliability applications.

This device ACTF512K8 is input TTL and output CMOS compatible. The command register is written by bringing WE to a logic low level (VIL), while CE is low and OE is at logic high level (VIH). Reading is accomplished by chip Enable (CE)and Output Enable (OE) being logically active, see Figure 9. Access time grades of 60ns, 70ns, 90ns, 120ns and 150ns maximum are standard.

The ACTF512K8 is available in a choice of