ACTF4M32A

Features:

`8 Low Voltage/Power AMD 2M x 8 FLASH Die in One MCM Package
`Overall Configuration is 4M x 32
`+5V Power Supply / +5V Programing Operation
`Access Times of 100, 120 and 150 ns
`Erase/Program Cycles 100,000 Minimum (+25°C)
`Sector erase architecture (Each Die)
. 32 uniform sectors of 64 Kbytes each
. Any combination of sectors can be erased. Also supports full chip erase
. Sector group protection is user definable
`Embedded Erase Algorithims Automatically pre-programs and erases the die or any sector
`Embedded Program Algorithims Automatically programs and verifies data at specified address
`Ready/Busy output (RY/BY) Hardware method for detection of program or erase cycle completion
`Hardware RESET pin Resets internal state machine to the read mode
`Erase Suspend/Resume Supports reading or programming data to a sector not being erased
` Packaging Hermetic Ceramic
. 68Lead, Low Profile CQFP(F1), 1.56"SQ x .140"max
. 68Lead, Dual-Cavity CQFP(F2), 0.88"SQ x .20"max (.18 max thickness available, contact factory for details) (Drops into the 68 Lead JEDEC .99"SQ CQFJ footprint)
`Internal Decoupling Capacitors for Low Noise Operation
`Commercial, Industrial and Military Temperature Ranges
`MIL-PRF-38534 Compliant MCMs Available


Pinout




Description

Utilizing AMD's Sector Erase Flash Memory Die, the ACT-F4M32A is a high speed, 128 megabit CMOS flash multichip module (MCM) designed for full temperature range, military, space, or high reliability applications.

The ACT-F4M32A consists of eight high-performance AMD Am29F016 16Mbit (16,777,216 bit) memory die. Each die contains 8 separately write or erase sector groups of 256Kbytes (A sector group consists of 4 adjacent sectors of 64Kbytes each).

The command register ACTF4M32A is written by bringing WE to a logic low level (VIL), while CE is low and OE is high (VIH). Reading is accomplished by chip Enable (CE) and Output Enable (OE) being logically active. Access time grades of 100ns, 120ns and 150ns maximum are standard.

The ACT-F4M32A is offered in two different hermetically sealed co-fired 68 lead ceramic packages. This allows operation in a military environment temperature range of -55°C to +125°C.

The ACT-F4M32A can be programmed (both read and write functions) in-system using the +5.0V VCC power supply. A 12.0V VPP is not required for programming or erase operations. The end of program or erase is detected by the RY/BY pin, Data Polling of DQ7, or by the Toggle bit (DQ6).

The ACT-F4M32A also has a hardware RESET pin. When this pin is driven low, execution of any Embedded Program Alggorithm or Embedded Erase Algorithm will be terminated. Each block can be independently erased and programmed 100,000 times at +25°C.