Features: ·4-C 128K x 8 SRAMs & 4 - 128K x 8 Flash Die in One MCM ·Access Times of 25ns (SRAM) and 60ns (Flash) or 35ns (SRAM) and 70ns or 90ns (Flash) ·Organized as 128K x 32 of SRAM and 128K x 32 of Flash Memory with Common Data Bus ·Low Power CMOS ·Input and Output TTL Compatible Design ·MI...
ACT-SF128K32N-26P1I: Features: ·4-C 128K x 8 SRAMs & 4 - 128K x 8 Flash Die in One MCM ·Access Times of 25ns (SRAM) and 60ns (Flash) or 35ns (SRAM) and 70ns or 90ns (Flash) ·Organized as 128K x 32 of SRAM and 128K x...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
·4-C 128K x 8 SRAMs & 4 - 128K x 8 Flash Die in One MCM
·Access Times of 25ns (SRAM) and 60ns (Flash) or 35ns (SRAM) and 70ns or 90ns (Flash)
·Organized as 128K x 32 of SRAM and 128K x 32 of Flash Memory with Common Data Bus
·Low Power CMOS
·Input and Output TTL Compatible Design
·MIL-PRF-38534 Compliant MCMs Available
·Decoupling Capacitors and Multiple Grounds for Low Noise
·Commercial, Industrial and Military Temperature Ranges
·Industry Standard Pinouts
·TTL Compatible Inputs and Outputs
·Packaging - Hermetic Ceramic
Symbol | Rating | Range | Units |
TC |
Operating Temperature | -55 to +125 | |
TSTG |
Storage Temperature | -65 to +150 | |
VG |
Maximum Signal Voltage to Ground | -0.5 to +7 | V |
TL |
Maximum Lead Temperature (10 seconds) | 300 | |
Parameter | |||
Flash Data Retention | 10 Years | ||
Flash Endurance (Write/Erase Cycles) | 10,000 |