Features: · Blocking voltage : VDRM / VRRM = +/-700V· Avalanche controlled : VCL typ = 1100 V· Nominal conducting current : IT(RMS) = 4A· High surge current capability: 30A for 20ms full wave· Gate triggering current : IGT < 10 mA or 25mA· Switch integrated driver· High noise immunity : static ...
ACST4: Features: · Blocking voltage : VDRM / VRRM = +/-700V· Avalanche controlled : VCL typ = 1100 V· Nominal conducting current : IT(RMS) = 4A· High surge current capability: 30A for 20ms full wave· Gate ...
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Symbol | Parameter | Value | Unit | ||
VDRM /VRRM | Repetitive peak off-state voltage | Tj = 10 °C | 700 | V | |
IT(RMS) | RMS on-state current full cycle sine wave 50 to 60 Hz |
per switch | Tamb = 110 °C | 4 | A |
total array | Tamb =100 °C | A | |||
ITSM | Non repetitive surge peak on-state current Tj initial = 25°C, full cycle sine wave |
F =50 Hz | 30 | A | |
F =60 Hz | 33 | A | |||
I2t | Fusing capability | tp = 10ms | 6.4 | A²s | |
dI/dt | Repetitive on-state current critical rate of rise IG = 10mA (tr < 100ns) |
F =120 Hz | 50 | A/s | |
VPP | Non repetitive line peak pulse voltage | note 1 | 2 | kV | |
Tstg | Storage temperature range | - 40 to + 150 | °C | ||
Tj | Operating junction temperature range | - 40 to + 125 | °C | ||
Tl | Maximum lead temperature for soldering during 10s | 260 |
°C |