Features: • QML Qualified Per MIL-PRF-38535 Requirements• 1.25 Micron Radiation Hardened SOS CMOS• Radiation Environment- Latch-Up Free Under Any Conditions- Total Dose (Max.) . . . . . . . . . . . . . . . . . .3 x 105 RAD(Si)- SEU Immunity. . . . . . . . . . . . . <1 x 10-10 ...
ACS30MS: Features: • QML Qualified Per MIL-PRF-38535 Requirements• 1.25 Micron Radiation Hardened SOS CMOS• Radiation Environment- Latch-Up Free Under Any Conditions- Total Dose (Max.) . . ...
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The Radiation Hardened ACS30MS is an 8-Input NAND Gate. A HIGH level on all inputs results in a LOW level on the Y output. A LOW level on any input results in a HIGH level on the Y output. All inputs are buffered and the outputs are designed for balanced propagation delay and transition times.
The ACS30MS is fabricated on a CMOS Silicon on Sapphire (SOS) process, which provides an immunity to Single Event Latch-up and the capability of highly reliable performance in any radiation environment. These devices offer significant power reduction and faster performance when compared to ALSTTL types.