ACS253MS

Features: • QML Qualified Per MIL-PRF-38535 Requirements• 1.25Micron Radiation Hardened SOS CMOS• Radiation Environment- Latch-up Free Under any Conditions- Total Dose . . . . . . . . . . . . . . . . . . . . . . 3 x 105 RAD(Si)- SEU Immunity . . . . . . . . . . . .<1 x 10-10 E...

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ACS253MS Picture
SeekIC No. : 004267883 Detail

ACS253MS: Features: • QML Qualified Per MIL-PRF-38535 Requirements• 1.25Micron Radiation Hardened SOS CMOS• Radiation Environment- Latch-up Free Under any Conditions- Total Dose . . . . . . ...

floor Price/Ceiling Price

Part Number:
ACS253MS
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/26

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Product Details

Description



Features:

• QML Qualified Per MIL-PRF-38535 Requirements
• 1.25Micron Radiation Hardened SOS CMOS
• Radiation Environment
- Latch-up Free Under any Conditions
- Total Dose . . . . . . . . . . . . . . . . . . . . . . 3 x 105 RAD(Si)
- SEU Immunity . . . . . . . . . . . .<1 x 10-10 Errors/Bit/Day
- SEU LET Threshold . . . . . . . . . . . . .>100MeV/(mg/cm2)
• Input Logic Levels . . .VIL = (0.3)(VCC), VIH = (0.7)(VCC)
• Output Current . . . . . . . . . . . . . . . . . . . . . . . . . ±8mA
• Quiescent Supply Current. . . . . . . . . . . . . . . . . 400s
• Propagation Delay
- Enable to Output . . . . . . . . . . . . . . . . . . . . . . . . 12ns
- Input or Address to Output . . . . . . . . . . . . . . . . 15ns



Application

• Digital Channel Selection
• Data Routing
• High Frequency Switching



Pinout

  Connection Diagram


Description

The Radiation Hardened ACS253MS is a Dual 4-Channel Multiplexer having two common binary control inputs for selecting 1 of 4 data channels. All inputs and outputs are buffered and are designed for balanced propagation delay and transition times.

Separate Output Enable inputs are provided to ease system design. When OE1 or OE2 are set HIGH, the corresponding output is configured into a high impedance state.

The ACS253MS is fabricated on a CMOS Silicon on Sapphire (SOS) process, which provides an immunity to Single Event
Latch-up and the capability of highly reliable performance in any radiation environment. These devices offer significant
power reduction and faster performance when compared to ALSTTL types.




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