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ACS132MS

Features: • QML Qualified Per MIL-PRF-38535 Requirements• 1.25 Micron Radiation Hardened SOS CMOS• Radiation Environment- Latch-Up Free Under any Conditions- Total Dose. . . . . . . . . . . . . . . . . . . . . . 3 x 105 RAD (Si)- SEU Immunity. . . . . . . . . . . . <1 x 10-10 ...

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SeekIC No. : 004267868 Detail

ACS132MS: Features: • QML Qualified Per MIL-PRF-38535 Requirements• 1.25 Micron Radiation Hardened SOS CMOS• Radiation Environment- Latch-Up Free Under any Conditions- Total Dose. . . . . . ...

ACS132MS Data Sheet

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Part Number:
ACS132MS
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• QML Qualified Per MIL-PRF-38535 Requirements
• 1.25 Micron Radiation Hardened SOS CMOS
• Radiation Environment
- Latch-Up Free Under any Conditions
- Total Dose. . . . . . . . . . . . . . . . . . . . . . 3 x 105 RAD (Si)
- SEU Immunity. . . . . . . . . . . . <1 x 10-10 Errors/Bit/Day
- SEU LET Threshold . . . . . . . . . . .. . >100MeV/(mg/cm2)
• Input Logic Levels . .VIL = (0.3)(VCC), VIH = (0.7)(VCC)
• Hysteresis Voltage . . . . . . . . . . . . . . . . . .400mV (Min)
• Output Current . . . . . . . . . . . . . . . . . . . . . ±8mA (Min)
• Quiescent Supply Current . . . . . . . . . . . . .100A (Max)
• Propagation Delay . . . . . . . . . . . . . . . . . . . 12ns (Max)


Application

• High Speed Control Circuits
• Sensor Monitoring
• Low Power Designs


Pinout

Connection Diagram


Description

The Radiation Hardened ACS132MS is a Quad 3-Input NAND Gate with Schmitt Trigger inputs. When any input to one of the gates is at a LOW level, the corresponding Y output will be HIGH. A HIGH level on both inputs will cause the output for that gate to be LOW. The Schmitt Trigger input stage provides 400mV (Min) of hysteresis and permits input signals with longer rise times. All inputs are buffered and the outputs are designed for balanced propagation delay and transition times.

The ACS132MS is fabricated on a CMOS Silicon on Sapphire (SOS) process, which provides an immunity to Single Event Latch-up and the capability of highly reliable performance in any radiation environment. These devices offer significant power reduction and faster performance when compared to ALSTTL types.




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